The main equipment of the Laboratory is the X-ray diffractometer facility for powder method “STOE Transmission Diffractometer System STADI P” (STOE AUTOMATED DIFFRACTOMETER FOR POWDER). The company "STOE & Cie GmbH" (Darmstadt, Germany), one of the oldest and world-well-known company in this production field, is a provider of Laboratory equipment. The facility has all necessary certificates and documents, and also has attestation for “The International Centre for Diffraction Data” (ICDD).

The following links present the documents and information about technical data and possibilities of the devices.

Official webpage of STOE STADI P – the description of the equipment on provider webpage.
STOE official webpage – the description of additional component parts (sample holders, detectors, etc.).
Equipment specification – the characteristics of diffractometer alignment and calibration according to “The International Centre for Diffraction Data” (ICDD) standards.
Equipment description, specification and possibilities – notes from scientific seminar “Physics 10-9” of Ivan Franko National University of Lviv.
STOE STADI P Presentation – description of diffractometer and examples of investigations.

At present time the unit of equipment is standard: one horizontal goniometer (STOE transmission geometry), curved Ge (111) monochromator, linear PSD, sample holders "STOE Transmission Sample Holder" and "STOE Capillary Sample Holder". It is planned to complete the equipment by second horizontal goniometer (Bragg-Brentano geometry) and by high-temperature attachment "STOE High Temperature Furnace model 0.65.1".

The preference in researches is given to precise and high-quality recording (average time about 30 h) for following crystal structure solution and refinement, determination of short-range order and microstructural parameters, etc. Some examples of obtained results are given below:

Crystal structure determination – solution and refinement of the crystal structure by powder method for new compound OsSe2Br12 of new structure type (recording in capillary, Debye-Scherrer geometry, hygroscopic object).
[Volkov S.V., Demchenko P.Yu., Akselrud L.G., Gladyshevskii R.E., Pekhnyo V.I., Fokina Z.A., Yanko O.G., Kharkova L.B. Crystal structure of osmium selenobromide OsSe2Br12 // Russian Journal of Inorganic Chemistry. – 2011. – Vol. 56, No. 3. – P. 387–391.].
Crystal structure determination – solution and refinement of the crystal structure by powder method for new superionic compound Ag6SnS4Br2 of new structure type (recording at STOE transmission (modified Guinier) geometry).
[Mykolaychuk O.G., Moroz M.V., Demchenko P.Yu. Synthesis and electroconductivity of new superionic compound Ag6SnS4Br2 // Physics of the Solid State. – 2010. – Vol. 52, Is. 2.– P. 221-224.] [Mykolaychuk O.G., Moroz M.V., Demchenko P.Yu., Akselrud L.G., Gladyshevskii R.E. Phase relations in the Ag8SnS6–Ag2SnS3–AgBr system and crystal structure of Ag6SnS4Br2 //Inorganic Materials. – 2010. – Vol. 46, No. 6. – P. 590–597.]
Crystal structure refinement – X-ray qualitative and quantitative phase analysis, X-ray structural analysis of new compounds KRW(CN)8·7H2O (R-rare earths) of triclinic symmetry.
[Semenyshyn D.I., Typilo I.V., Demchenko P.Yu. and Gladyshevskii R.E. New octacyanomolybdates (IV) and octacyanotungstates (IV) of some rare earth elements // Naukovyj Visnyk of Volyn’ National University, Chemistry Sciences. – 2009. – № 29. – С. 8-13.].
Crystal structure refinement – X-ray phase, X-ray structural analyses of rare-earth phosphates (materials for luminescence).
[Shalapska T., Stryganyuk G., Demchenko P., Voloshinovskii A., Dorenbos P. Luminescence properties of Ce3+-doped LiGdP4O12 upon vacuum-ultraviolet and X-ray excitation // J. Physics: Condensed Matter. – 2009. – Vol. 21, No. 44. – P. 445901 (8pp); Shalapska T., Stryganyuk G., Romanyshyn Yu., Trots D., Demchenko P., Gektin A., Voloshinovskii A., Dorenbos P. Photon cascade luminescence from Pr3+ ions in LiPrP4O12 polyphosphate // J. Phys. D: Appl. Phys. – 2010. – Vol. 43, N. 40. – P. 405404 (7pp).].
Microstructural investigations – study of changes of microstructural parameters under the influence of applied magnetic field for single crystal silicon КДБ-10 and КЭФ-4.5. [Trachevsky V.V., Steblenko L.P., Demchenko P.Y., Koplak O.V., Kuryliuk A.M., Melnik A.K. Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field // Semiconductor Physics, Quantum Electronics & Optoelectronics. – 2010. – Vol. 13, N 1. – P. 87-90. Steblenko L.P., Mudryi S.I., Koplak O.V., Demchenko P.Yu. Defect-structural changes in near-surface layers of n-Si // VII International School-Conference «Relevant problems in physics of semiconductors» / Book of Abstracts, September 28 - October 01, 2010. – Drohobych, Ukraine, 2010. – P. 182–183.].
Short-range order, microstructural investigations – study of short-range order parameters for amorphous sample SiO2 (90 %) + V2O5 (10%) (materials for catalysis), crystalline ZnO and SiO2.
[Shevchuk V.N., Popovych D.I., Usatenko Yu.N., Demchenko P.Yu., Serkiz R.Ya. Structure features and paramagnetic centres in oxide nanopowders // Functional Materials. – 2009. – Vol. 16, No.4. – P. 448-455].